11th International Conference on
Narrow Gap Semiconductors


Buffalo, New York, U.S.A.
June 16 - 20, 2003

 
 

Conference Info:

What's New:

Buffalo and Regional Info:

   

Plenary Session Mo-A

(Monday, 8:45 - 10:15 am)

 

Mo-A-1P
8:45-9:30
E.I. Rashba - Spin Dynamics and Spin Injection

Mo-A-2P
9:30-10:15

H. Kroemer - "6.1Å Family" (InAs, GaSb, AlSb) and its Heterostructures: A Review

 

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Last updated: 06/23/2003 17:30