TuP-01
Effect of Structural Defects on InSb/AlxIn1-xSb
Quantum Wells Grown on GaAs (001)
T.D. Mishima, J.C. Keay, N. Goel, M.A. Ball, S.J. Chung, M.B.
Johnson, and M.B. Santos
Department of Physics and Astronomy, and Center for Semiconductor
Physics in Nanostructures, University of Oklahoma, Norman, OK
73019 USA
TuP-02
MOCVD Growth of Undoped and p-Doped GaSb(100)
Z. Kollonitsch, K. Möller, C. Giesen*, M. Heuken*, T. Hannappel,
F. Willig
Hahn-Meitner-Insititute, SE4, Glienickerstr. 100, 14109 Berlin,
Germany
*Aixtron AG, Kackertstr. 15-17, 52072 Aachen, Germany
TuP-03
Disordering-Induced Effects in p-PbSe Single Crystals
Alexander E. Kar'kin1, Vladimir V. Shchennikov1,
Sergey V. Ovsyannikov1, Eugenii P.Skipetrov2,
Boris N. Goshchitskii1
1Institute of Metal Physics, UD of RAS, 620219,
GSP-170, Yekaterinburg, Russia
2Physics Department, Moscow State University, 119899
Moscow, Russia
TuP-04
Transport, Optical and Magneto-Transport Properties of Hetero-Epitaxial
InAsxSb1-x/GaAs and Bulk InAsxSb1-x
(x < 0.06) Crystals: Experiment and Theoretical Analysis
Bhavtosh Bansal , V. K. Dixit, V. Venkataraman and H. L. Bhat
Department of Physics, Indian Institute of Science, Bangalore
560 012
TuP-05
High Resolution X-ray Diffraction Analysis of SnTe/Sn1-xEuxTe
Superlattices Grown on BaF2(111) Substrates
E. Abramof, P.H.O. Rappl, A.Y. Ueta
Laboratório Associado de Sensores e Materiais - LAS,
Instituto Nacional de Pesquisas Espaciais - INPE, CP515, 12245-970,
São José dos Campos-SP, Brazil
TuP-06
Characterization of Intrinsic and Compensated Defect Microstructures
in Dilute III-V-N Alloys
Devki N. Talwar
Department of Physics, Indiana University of Pennsylvania,
56 Weyandt Hall, Oakland Avenue, Indiana, PA
TuP-07
Magnetization and Magnetic Susceptibility on InAs Nano-Rings
O.Voskoboynikov and C.P.Lee
Department of Electronics Engineering and Institute of Electronics
National Chiao Tung University, Hsinchu, Taiwan
TuP-08
Millisecond Fluorescence in InAs QD's Embedded in AlAs
T.S. Shamirzaev, A.M.Gilinsky, A.I. Toropov, A.K. Bakarov, D.A.
Tenne, and K.S. Zhuravlev
Institute of Semiconductor Physics, Novosibirsk 630090, Russia.
C. von Borczyskowski, and D.R.T. Zahn.
Institut für Physik, TU Chemnitz, D-09107, Chemnitz, Germany
TuP-09
Zeeman Effect and Magnetic Anomalies in Narrow-Gap Semiconductor
Quantum Dots
S. J. Prado1, V. López-Richard2,
C. Trallero-Giner3, A. M. Alcalde1
and G. E. Marques1
1Departamento de Física, Universidade Federal
de São Carlos, 13565-905, São Carlos, SP, Brazil
2Instituto de Física de São Carlos,
Universidade de São Paulo,13560-970, São Carlos,
SP, Brazil
3Department of Theoretical Physics, Havana University,
San Lazaro, 10400 Habana, Cuba
TuP-10
Ultrafast Carrier Dynamics of Resonantly Excited InAs/GaAs Self-Assembled
Quantum Dots
K. Král, P. Zdenek and Z. Khás
Institute of Physics, Academy of Sciences of Czech Republic
TuP-11
Hybridized Electron States in Self-Assembled Quantum Dots: Kondo
Excitons and Auger-like Processes
A. O. Govorov1, K. Karrai2, R. J. Warburton3,
A.V. Kalameitsev 4,
and V. Vakaryuk1
1Department of Physics and Astronomy, Ohio University,
Athens, Ohio 45701, USA
2Center for NanoScience and Sektion Physik, Ludwig-Maximilians-Universitaet,
Geschwister-Scholl-Platz 1, 80539 Munich, Germany
3Department of Physics, Heriot-Watt University,
Edinburgh EH14 4AS, UK
4Institute of Semiconductor Physics, 630090 Novosibirsk,
Russia
TuP-12
Microconstrictions as Generators of Super Narrow Electron Distributions
R.N.Gurzhi1, A.N.Kalinenko1, A.I.Kopeliovich1,
A.V.Yanovsky1,
E.N.Bogachek2, and U.Landman2
1B.Verkin Institute for Low Temperature Physics
& Engineering, 47 Lenin Ave, Kharkov, 61103, Ukraine
2School of Physics, Georgia Institute of Technology,
Atlanta, GA 30332-0430, USA
TuP-13
Optimization of a Non-Cryogenic Quantum Infrared Detector
B. Vinter1, G. Marre1, and V. Berger1,2
1THALES Research and Technology, Orsay, France
2Pôle "Materiaux et Phénomènes
Quantiques", Federation de Recherche, Université Denis
Diderot Paris, Paris France
TuP-14
Intersubband Transitions in Coupled InAs/AlSb Quantum Wells
S. Sasa, K. Ueda, Y. Nakajima, M. Inoue
New Materials Research Center, Osaka Institute of Technology,
Osaka, Japan
D. C. Larrabee, G. A. Khodaparast, J. Kono
Department of Electrical and Computer Engineering, Rice University
K. I. Kolokolov, J. Li, C. Z. Ning
NASA Ames Research Center, Moffett Field, California
TuP-15
Design and Fabrication of Infrared Detectors based on Lattice
Matched InAs.91Sb.09 on GaSb
J.L. Reverchon1, G. Marre1, C. Renard1,
M. Carras1 V. Berger2, B. Vinter1
and X. Marcadet1
1Thales Research an Technology, Domaine de Corbeville,
F-91404 Orsay, France
2Université Denis Diderot Paris 7 case 7021,
2 place Jussieu, 75251 Paris Cedex
TuP-16
The Submicrometer Thickness n-InSb/i-GaAs Epilayers for Magnetoresistor
Applications at Room Temperatures of Operation
O.A. Mironov1, M. Myronov, S. Durov, V.T. Igumenov2,
V.M. Konstantinov2,
V.V. Paramonov2, T. Zhang3 and L.F. Cohen3
Department of Physics, University of Warwick, Coventry CV4
7AL, UK
1also at International Laboratory of High Magnetic
Fields and Low Temperatures, 53-421 Wroclaw, POLAND
2Institute for Electronic Materials, 248001 Kaluga,
RUSSIA
3Blackett Laboratory, Imperial College, Prince Consort
Road, London SW7 2BW, UK
TuP-17
Up-Conversion of Terahertz Radiation Induced by the Photon Drag
Effect
V. K. Malyutenko, V. L. Borblik, V. V. Vainberg
Institute of Semiconductor Physics, 03028, Kiev, Ukraine
TuP-18
InAsSb/GaAlSb/InAsSb nBn IR Detector for the 3-5mm
S. Maimon and G.W Wicks
The Institute of Optics, University of Rochester, Rochester,
NY USA
TuP-19
Many-Body Effects on Intersubband Resonances in Narrow InAs/AlSb
Semiconductor Quantum Wells
Jianzhong Li and C. Z. Ning
Center for Nanotechnology and NASA Advanced Supercomputing
Division,
NASA Ames Research Center, Moffett Field, CA94035, U.S.A.
TuP-20
Microscopic Modeling of Intersubband Resonances in InAs/AlSb Quantum
Wells
Jianzhong Li1, K. I. Kolokolov1, C. Z. Ning1,
D. C. Larrabee2,
G. A. Khodaparast2, J. Kono2, K. Ueda3,
Y.Nakajima3, S. Sasa3
and M. Inoue3
1Center for Nanotechnology, NASA Ames Research Center,
Moffett Field, CA 94035
2Department of Electrical Engineering, Rice University,
Houston, TX 77005
3Department of Electr saka Institute of Technology,
Osaka, Japan
TuP-21
Intersubband Transitions in Narrow InAs/AlSb Quantum Wells
D. C. Larrabee, G. A. Khodaparast, J. Kono
Department of Electrical and Computer Engineering, Rice University
K. Ueda, Y. Nakajima, S. Sasa, M. Inoue
New Materials Research Center, Osaka Institute of Technology,
Osaka, Japan
K. I. Kolokolov, J. Li, C. Z. Ning
NASA Ames Research Center, Moffett Field, California
TuP-22
Optimization of InAs/GaSb Type-II Superlattices for High Performance
of Photodetectors
H. J. Haugan, G. J. Brown, L. Grazulis, K. Mahalingam, D. H. Tomich
Air Force Research Laboratory, Materials & Manufacturing
Directorate, Wright-Patterson AFB, OH 45433-7707
TuP-23
Resonant-Cavity-Enhanced Photodetectors and LEDs in the Mid-Infrared
Alex M. Green, David G. Gevaux, Chris C. Phillips
EXSS, Department of Physics, Imperial College London, London
SW7 2BW, UK
TuP-24
Hot Electrons and Interband Breakdown a in p-type Kane Semiconductor
with a Degenerate Hole Distribution
A.V.Dmitriev1 and A.B.Evlyukhin2
1Moscow State University, Moscow, 119899, Russia
2Vladimir State University, Vladimir, 600000, Russia
TuP-25
Calculation of the Auger Recombination Intensity in Kane Semiconductors
with Degenerate Carrier Distribution
A.V. Dmitriev and A.L. Oruzheinikov
Department of Low Temperature Physics, the Faculty of Physics,
Moscow State University, Moscow, 119992, Russia
