11th International Conference on Narrow Gap Semiconductors
Buffalo, New York, U.S.A. June 16 - 20, 2003
Th-B-1 10:40-11:10 M. Missous - Highly Compressively Strained InGaAs-InAlAs Quantum Cascade Structures for Short Wavelength Emission Th-B-2 11:10-11:30 J. Leotin - Energy Relaxation of Magnetically Confined Electrons in Quantum Cascade Lasers Th-B-3 11:30-11:50 M. Grau - GaSb Based Lasers for Emission Wavelengths Above 2.5 µm Th-B-4 11:50-12:10 J.G. Kim - High-Power Room-Temperature Continuous Operation of Molecular Beam Epitaxy grown Type-I In(Al)GaAsSb/GaSb diode lasers at λ = 2.7 and 2.8 µm Back to Schedule Overview
Back to Schedule Overview
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Last updated: 06/23/2003 17:30