11th International Conference on
Narrow Gap Semiconductors


Buffalo, New York, U.S.A.
June 16 - 20, 2003

 
 

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Session Th-B

(Thursday, 10:40 am - 12:10 pm)

 

Th-B-1
10:40-11:10
M. Missous - Highly Compressively Strained InGaAs-InAlAs Quantum Cascade Structures for Short Wavelength Emission
Th-B-2
11:10-11:30
J. Leotin - Energy Relaxation of Magnetically Confined Electrons in Quantum Cascade Lasers
Th-B-3
11:30-11:50
M. Grau - GaSb Based Lasers for Emission Wavelengths Above 2.5 µm
Th-B-4
11:50-12:10
J.G. Kim - High-Power Room-Temperature Continuous Operation of Molecular Beam Epitaxy grown Type-I In(Al)GaAsSb/GaSb diode lasers at λ = 2.7 and 2.8 µm

 

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Last updated: 06/23/2003 17:30