11th International Conference on
Narrow Gap Semiconductors

Buffalo, New York, U.S.A.
June 16 - 20, 2003

Conference Info:

What's New:

• Conference Photo
  
  
• FINAL Conference Program
• FINAL Poster Schedule/Info
• Manuscript Preparation/Submission Info
• A/V Information
• Conference Location and Campus Parking
• Directions, Maps and Associated Information

• Hotel Information
• Conference Fees
• Conference Excursion, June 18th
• Conference Dinner, June 19th
• Accompanying Persons Program - CANCELLED !!!
  

• Online Registration
• Correspondence
• Important Dates
  
• Limited Student Support
• Second Announcement and Call for Papers
• Abstracts Due
• Conference Scope
• Plenary Speakers
• Invited Speakers
• Organizing and Program Committee
• International Advisory Committee
• Related Conferences
• Sponsors

Buffalo and Regional Info:

• University at Buffalo (what's where etc.)
• Buffalo
• Buffalo Niagara Convention & Visitors Bureau

Session Fr-A

(Friday, 8:30 - 9:00 am)

Fr-A-1 8:30-9:00	P. Deelman - InAs-Based HBT Devices and Materials
Fr-A-2 9:00-9:20	J.N. Schulman - Quantum Tunneling Sb-Heterostructures for High Frequency/Sensitivity Detectors
Fr-A-3 9:20-9:40	X. Wu - Physical Processes of Current Gain in InAs Bipolar Transistors

 

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Last updated: 06/23/2003 17:30