11th International Conference on
Narrow Gap Semiconductors

Buffalo, New York, U.S.A.
June 16 - 20, 2003

Conference Info:

What's New:

• Conference Photo
  
  
• FINAL Conference Program
• FINAL Poster Schedule/Info
• Manuscript Preparation/Submission Info
• A/V Information
• Conference Location and Campus Parking
• Directions, Maps and Associated Information

• Hotel Information
• Conference Fees
• Conference Excursion, June 18th
• Conference Dinner, June 19th
• Accompanying Persons Program - CANCELLED !!!
  

• Online Registration
• Correspondence
• Important Dates
  
• Limited Student Support
• Second Announcement and Call for Papers
• Abstracts Due
• Conference Scope
• Plenary Speakers
• Invited Speakers
• Organizing and Program Committee
• International Advisory Committee
• Related Conferences
• Sponsors

Buffalo and Regional Info:

• University at Buffalo (what's where etc.)
• Buffalo
• Buffalo Niagara Convention & Visitors Bureau

Session Mo-C

(Monday, 1:30 - 3:00 pm)

Mo-C-1 1:30-2:00	R. Nicholas - Optical properties of narrow gap quantum dots and wells in the InAs/InSb/GaSb systems
Mo-C-2 2:00-2:20	S. Ishida - Weak-Field Magnetoresistance Anomaly and Shubnikov-de Haas Oscillations in Sn Doped InSb Thin Films on GaAs (100) Substrates
Mo-C-3 2:20-2:40	T. Zhang - InSb Epilayers on GaAs (100) for Spintronic and MR Sensor Applications
Mo-C-4 2:40-3:00	C. Pidgeon - Electron Spin Lifetimes in Long Wavelength Hg1-xCdxTe and InSb at Elevated Temperature

 

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Last updated: 06/23/2003 17:30