11th International Conference on
Narrow Gap Semiconductors


Buffalo, New York, U.S.A.
June 16 - 20, 2003

 
 

Conference Info:

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Session Tu-B

(Tuesday, 10:30 - 12:00 am)

 

Tu-B-1
10:30-11:00
G.R. Nash - Infrared Negative Luminescence Devices and Higher Operating Temperature Detectors
Tu-B-2
11:00-11:20
M.A. Remennyi - InGaAsSb Negative Luminescent Devices with Built-in Cavities Emitting at 3.9 µm
Tu-B-3
11:20-11:40
V.K. Malyutenko - Negative Luminescence in Semiconductors: A Retrospective View
Tu-B-4
11:40-12:00
J.R. Lindle - Negative Luminescence from Mid-Wave Infrared HgCdTe Diode Arrays

 

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Last updated: 06/23/2003 17:30