11th International Conference on
Narrow Gap Semiconductors

Buffalo, New York, U.S.A.
June 16 - 20, 2003

Conference Info:

What's New:

• Conference Photo
  
  
• FINAL Conference Program
• FINAL Poster Schedule/Info
• Manuscript Preparation/Submission Info
• A/V Information
• Conference Location and Campus Parking
• Directions, Maps and Associated Information

• Hotel Information
• Conference Fees
• Conference Excursion, June 18th
• Conference Dinner, June 19th
• Accompanying Persons Program - CANCELLED !!!
  

• Online Registration
• Correspondence
• Important Dates
  
• Limited Student Support
• Second Announcement and Call for Papers
• Abstracts Due
• Conference Scope
• Plenary Speakers
• Invited Speakers
• Organizing and Program Committee
• International Advisory Committee
• Related Conferences
• Sponsors

Buffalo and Regional Info:

• University at Buffalo (what's where etc.)
• Buffalo
• Buffalo Niagara Convention & Visitors Bureau

Session W-B

(Wednesday, 10:30 - 12:00 am)

W-B-1 10:30-11:00	H. Luo - Ferromagnetic GaSb/Mn and InAs/Mn Digital Alloys
W-B-2 11:00-11:20	W.L. Lim - MBE Growth and Magnetotransport Studies of Ferromagnetic Ga1-xMnxSb Semiconductor Layers on Hybrid GaAs/ZnTe Substrates
W-B-3 11:20-11:40	D.Z. Ting - InAs/GaSb/AlSb Resonant Tunneling Spin Device Concepts
W-B-4 11:40-12:00	G.B. Kim - Electric-field Control of Ferromagnetism in GaSb/Mn Digital Alloys

 

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Last updated: 06/23/2003 17:30